Transition metal defects which were grown-in by using the float-zone technique were investigated, by means of deep-level transient spectroscopy, for all elements with valences of between 9 and 11. The energy levels and their chemical shifts were in reasonable agreement with theoretical predictions for substitutional defects. The concentrations of electrically active defects for Cu, Ni, etc., as compared with Au, Pt, etc., were up to 3 orders of magnitude lower than the total metal concentration.

H.Lemke: Materials Science Forum, 1995, 196-201, 683-8