Carrier recombination centers which were related to Fe complexes in p-type material were studied by using microwave- and light-induced absorption techniques. Thermal- and photo-activation methods were used to decompose Fe-B pairs and to study the resultant effect upon the recombination lifetime. Due to photo-dissociation of the Fe-B pairs, the lifetime increased for high-level injection. Efficient recombination occurred via an acceptor level at Ec - 0.29eV; as deduced from the temperature dependence of the carrier lifetime.

A.Kaniava, A.L.P.Rotondaro, J.Vanhellemont, U.Menczigar, E.Gaubas: Applied Physics Letters, 1995, 67[26], 3930-2