Theoretical predictions of point defect related models for ion beam-induced epitaxial crystallization, with reaction- or diffusion-limited kinetics, were compared with each other and with experimental data. It was shown that the diffusion model provided the correct nuclear energy deposition and dose-rate dependence of the ion beam-induced epitaxial crystallization rate, whereas marked differences were observed in the case of the reaction model. A compilation of various experimental data sets indicated a uniform diffusion regime for ion beam-induced epitaxial crystallization over a wide range of defect generation rates. In this range, the ion beam-induced epitaxial crystallization rate could be estimated by using a simple formula. The expected layer-thickness dependence of the ion beam-induced epitaxial crystallization rate was verified by  in situ  time-resolved reflectivity measurements. On the basis of these results, it was concluded that point defects which originated from both the amorphous and crystalline sides contributed to ion beam-induced epitaxial crystallization. It was suggested that di-vacancies were the defects which diffused and stimulated recrystallization at the amorphous/crystalline interface.

V.Heera, T.Henkel, R.Kögler, W.Skorupa: Physical Review B, 1995, 52[22], 15776-84