The self-trapping of holes at specific weak Si-Si bonds in amorphous hydrogenated material was analyzed on the basis of an extrinsic mechanism for self-trapping which had been suggested by experimental evidence. The nature of the hole wave function was elucidated, by using a tight-binding approach, on the basis of optically detected electron-nuclear double resonance experiments.

K.Morigaki, H.Hikita, M.Kondo: Journal of Non-Crystalline Solids, 1995, 190[1-2], 38-47