A model was described which simulated the precipitation kinetics of O, and the evolution of the precipitate density in annealed Czochralski-type wafers. A discrete rate equation representation, combined with Fokker-Planck equations, was used to treat the precipitation of O and the simultaneous formation of bulk stacking faults. This permitted the description of both statistical clustering during nucleation, and diffusional transport during growth. The model explicitly considered the effects of self-interstitials and stress upon the precipitation of O, and was thus able to predict experimental observations accurately.

S.Senkader, J.Esfandyari, G.Hobler: Journal of Applied Physics, 1995, 78[11], 6469-76