Electron beam doping of semiconductors, insulators and metals was investigated. The substrate material was covered with an over-layer of impurity sheets, and the over-layer surface was irradiated with high-energy electrons. Displaced single atoms or Frenkel pairs, which were introduced by the irradiation, migrated to the surface or the interface of the semiconductors and strongly diffused at the surface with a surface diffusivity that was of the order of 10-5cm2/s and a volume diffusivity that was of the order of 10-15cm2/s.

T.Wada, H.Fujimoto, H.Masuda: Materials Science Forum, 1995, 196-201, 1607-12