A technique was presented, for the formation of p+-n junctions, which involved the use of  in situ  doped selectively deposited Si0.7Ge0.3 as a solid diffusion source. The films were deposited in a lamp-heated processor, using SiCl2H2, GeH4 and B2H6. The microstructure of the SiGe layer resembled that of a heavily defected epitaxial layer with a high density of misfit dislocations, micro-twins and stacking faults. Conventional furnace annealing or rapid thermal annealing were used to drive the B from the  in situ  doped SiGe source and into the Si so as to form ultra-shallow p+-n junctions. Segregation at the SiGe/Si interface resulted in an approximately 3:1 B concentration discontinuity at the interface.

D.T.Grider, M.C.Oztürk, S.P.Ashburn, J.J.Wortman, G.Harris, D.Maher: Journal of Electronic Materials, 1995, 24[10], 1369-76