Relaxed n-type Si1-xGex layers of high structural and electrical quality, where x was between 0 and 0.25, were grown by means of molecular beam epitaxy onto <100> Si substrates using the compositional grading technique. The layers were then bombarded with 2MeV protons or low-energy ions. Four peaks were observed in the deep-level transient spectroscopic spectra after proton irradiation. The predominant line was identified as originating from Sb vacancy pairs. Although the activation enthalpy of this line increased with increasing Ge content, its energy level relative to the conduction band edge was the same for all compositions.

P.Kringhøj, A.N.Larsen: Physical Review B, 1995, 52[23], 16333-6