Deep centers which were introduced by the strain relaxation of hetero-epitaxial films were studied by means of deep-level transient spectroscopy. It was found that, in slightly relaxed samples, the numbers of hole traps which were located at Ev + 0.32eV increased with increased relaxation. On the other hand, extensive relaxation appeared to cause transformation of the traps to 2 other traps which were located deeper in the band-gap. Anomalous C-V relationships, and deep-level transient spectroscopic signals of electron traps (Ec - 0.27eV) which were observed only in relaxed samples, were explained in terms of a charged interfacial state model.

Y.Mera, K.Maeda, Y.Shiraki: Materials Science Forum, 1995, 196-201, 365-70