Implantation was used to investigate its mobility and passivating effect of H in epitaxial 4H and 6H polytypes. In order to avoid excessive damage, and the resultant trapping of H, the implantation was performed using 0.6keV 2H2+. The H depth profile was analyzed by using secondary-ion mass spectrometry, and the electrical properties were measured by using capacitance-voltage profiling and admittance spectroscopy. In the case of p-type samples, the H diffused at the μ scale even at room temperature, and effectively passivated acceptors. In the case of n-type samples, the incorporation of H was suppressed and no passivation was detected.

Hydrogen Passivation of Silicon Carbide by Low-Energy Ion Implantation. N.Achtziger, J.Grillenberger, W.Witthuhn, M.K.Linnarsson, M.Janson, B.G.Svensson: Applied Physics Letters, 1998, 73[7], 945-7