Photoluminescence and electron spin resonance studies were made of thermal oxide films after B or P implantation. Photoluminescence bands at 4.3 and 2.6eV were observed. In the case of the 4.3eV bands, 2 photoluminescence excitation bands were observed at 5.0 and 7.4eV. On the basis of a comparison with those observed in the O-deficient bulk oxide, the 4.3 and 2.6eV photoluminescence bands were attributed to O vacancies which were produced by ion implantation. The decay of the 4.3eV band in ion-implanted thermal oxide films obeyed a power- or stretched exponential law. This suggested a distribution of photoluminescence lifetimes. The electron spin resonance signals of paramagnetic E’ centers in ion-implanted thermal oxide films were found to be broadened by dipole-dipole interactions between the closely-spaced defects. The photoluminescence and electron spin resonance results suggested that the O vacancies which were introduced by the implantation of thermal oxide films were perturbed by the local network structures.

H.Nishikawa, H.Fukui, E.Watanabe, D.Ito, M.Takiyama, A.Ieki, Y.Ohki: Materials Science Forum, 1995, 196-201, 97-102