Defects in buried SiO2 films in Si (SIMOX), which were formed by the implantation of O ions, were characterized by means of the photoluminescence which was excited by KrF excimer laser (5.0eV) and synchrotron radiation. Two photoluminescence bands were observed at 4.3 and 2.7eV. The 4.3eV band had 2 photoluminescence excitation bands at 5.0 and 7.4eV, and its decay time was 4.0ns for the 5.0eV excitation and 2.4ns for the 7.4eV excitation. The decay time of the 2.7eV photoluminescence band was found to be 9.7ms. These data were very similar to those for the 4.3 and 2.7eV photoluminescence bands which were observed in bulk silica glass of O-deficient type, and which were attributed to O vacancies.

K.S.Seol, A.Ieki, Y.Ohki, H.Nishikawa, M.Tachimori: Materials Science Forum, 1995, 196-201 1909-14