A 119Sn Mössbauer emission spectroscopic study was made of 119Cs ion-implanted monocrystalline wurtzite-structured material. On the basis of the isomer shifts, the Sn was found to be substitutional on the III and V sites, to be incorporated substitutionally on both sites and to be involved in Sn-vacancy complexes. Changes in the line intensities during rapid thermal annealing showed that partial annealing of the defect complexes already occurred at 700C and that an increase in the fraction of Sn on Ga sites was related to annealing of the defect complex, SnGa-VN.

M.Fanciulli, M.Lindroos, G.Weyer, T.D.Moustakas, Isolde: Materials Science Forum, 1995, 196-201, 61-6