It was noted that β grains which developed during recrystallization contained many small {112} Σ = 3 boundaries. Their structure was characterized by using 300kV high-resolution transmission electron microscopy, and the image contrast was simulated in order to determine the atomic reconstruction. Molecular dynamics calculations were performed using the angular N-body Tersoff potential. Structures were found which consisted of a stacking, of 6 planes, which was limited by two (111) Σ = 3 twins. These 2 twins could affect the atomic structure of the sample. It was concluded that a larger boundary should be observed in order to verify the effect of the {112} Σ = 3 twin size on the image contrast and on atomic reconstruction.

Grain Boundaries in β-SiC. C.Godon, C.Ragaru, O.H.Duparc, M.Lancin: Materials Science Forum, 1999, 294-296, 277-80