A study of the generation of H-induced defects in the Al/SiO2/Si system, by vacuum ultra-violet radiation, showed that small cross-section hole traps in the bulk of the oxide and donor-type states at the Si/SiO2 interface formed via different reaction paths. In both cases, the production of the atomic H which was required to obtain these defects involved only neutral species.

K.G.Druijf, J.M.M.De Nijs, E.Van der Drift, E.H.A.Granneman, P.Balk: Applied Physics Letters, 1995, 67[21], 3162-4