The microstructures of molecular beam epitaxially grown Pt films, which were extracted from Pt(100nm)/Cu(5nm) films on Si(111)-(7x7) substrates, were investigated by means of transmission electron microscopy. It was found that there existed 2 types of band-like structure along Si steps. These were characterized by 2 types of orientational relationship: Pt(111)<112¯>||Cu(111)<112¯>||Si(111)[11¯0] and Pt(111)<1+¯0.076, 10.076, 2>||Cu(111) <1+¯0.076, 10.076, 2>||Si(111)[11¯0]. The misorientation between them involved a rotation of 2.5 around the [111] axis. It was concluded that the misorientation which formed between bands was caused by the growth of Si(111) terraces without any step. With regard to the microstructure within the bands, it was found that there existed 2 types of variant which were related in the manner of a 180 rotational twin. The interfaces between the variants faceted into {112¯} planes which were perpendicular to the film, and the Pt film therefore remained monocrystalline throughout its depth. Each variant consisted of a number of grains.

K.Nishikawa, M.Yamamoto, T.Kingetsu: Materials Transactions, 1995, 36[8], 1012-7