A study was made of a reversible H annealing effect that was observed in these structures at temperatures above about 650C. It was seen as a decrease in the inversion capacitance in the presence of H. This phenomenon was shown to depend upon H atoms that were created on the metal, passed through the oxide, and interacted with charge-generation sites at the oxide/carbide interface. The results were only phenomenological, as no details of the annealing chemistry could be deduced from these experiments. However, it was found that the annealing process, and its reversal, had associated activation energies of about 0.9eV and 2.9eV/site, respectively.

A.Baranzahi, A.L.Spetz, I.Lundström: Applied Physics Letters, 1995, 67[21], 3203-5