The problem of the determination of misfit-induced structural features at the interfaces of semiconductor heterostructures was considered. A theory was then developed which permitted the investigation of such features, and which was based upon the elasticity equations; within the range of applicability of Hooke's law. The main aim of the theory was the determination of a parameter which defined the superstructure which could stabilize the interface between the host materials which made up the heterostructure. This was done by identifying a parameter, in the elasticity equations, which had to be considered by any model which took account not only of the mismatch of the lattice parameters of the host materials, but also of the differences in elastic density. The periodic sites of the defined super unit cell which was introduced by the misfit could be considered to be nucleation centers for a misfit dislocation network. Due to the lattice misfit, it was necessary to make an optimum choice of materials and growth conditions. In heterostructures in which a large misfit existed, the insertion of a transitional layer could often be useful. It was demonstrated that the present theory could be used to predict the composition of such transitional layers.

P.Masri: Physical Review B, 1995, 52[23], 16627-33