Epitaxial n-type samples were bombarded with 5.4MeV He ions. Capacitance-voltage measurements showed that the 5.4MeV ions removed free carriers at a rate of 6200/cm in the first μ below the surface. Deep-level transient spectroscopy revealed that, in addition to the radiation-induced defects which were previously revealed, using deep-level transient spectroscopy, at 0.18 to 0.20eV below the conduction band, this ion bombardment introduced 2 additional prominent defects: ER4 (Ec-0.78eV) and ER5 (Ec-0.95eV), at rates of 1510 and 3030/cm, respectively. Capture cross-section measurements revealed that the electron capture kinetics of ER5 were similar to those of a line defect.

Electrical Characterization of Two Deep Electron Traps Introduced into Epitaxially Grown n-GaN during He-Ion Irradiation. F.D.Auret, S.A.Goodman, F.K.Koschnick, J.M.Spaeth, B.Beaumont, P.Gibart: Applied Physics Letters, 1998, 73[25], 3745-7