It was recalled that low-energy ion implantation of semiconductors could produce defects in the near-surface region. These could be detected by means of ellipsometry. By using a simple analytical model, implantation parameters such as ion damage straggling and amorphization threshold could be obtained by using only one-wavelength ellipsometry. This was demonstrated by means of the example of Ar implantation (0.5 to 2.5keV) in Si.

U.Müller-Jahreis, P.Thiele, M.Bouafia, A.Seghir: Journal de Physique III, 1995, 5[5], 575-84