Single crystals were prepared by using a very rapid vapor growth technique. Defects such as micro-twins were eliminated, or limited, by increasing the growth stability. The investigation indicated that the latent heat should not be neglected under high growth-rate conditions. A model was developed in order to explain the effects of latent heat upon growth stability at the interface. A relationship was established between the crystal morphology and the growth conditions. This strongly suggested that the above defects were related to growth stability. The origin of twinning, as dominated by growth stability, was considered here.

H.Wiedemeier, G.H.Wu: Journal of Electronic Materials, 1995, 24[8], 1007-16