Schottky barrier diodes were prepared on N-implanted n-type material. The Schottky barrier height of the diodes was found to be 0.96eV. This was 0.12eV higher than that of non-implanted samples. Four distinctive electron traps, E1 (0.111), E2 (0.234), E3 (0.415) E4 (0.669), and one hole trap, H (0.545), were detected by means of deep-level transient spectroscopy.

K.M.Chen, Y.Q.Jia, Y.Chen, A.P.Li, S.X.Jin, H.F.Liu: Journal of Applied Physics, 1995, 78[6], 4261-3