The effect of non-stoichiometry of the melt composition upon the recombination activity of dislocations in undoped semi-insulating crystals was studied and analyzed. It was shown that the deviation from a stoichiometric melt composition was one of the main factors which affected the recombination activity of dislocations in undoped semi-insulating crystals. That is, the recombination activity of dislocations was increased when an As-rich melt was used, whereas it was decreased when a Ga-rich melt was used. The observed effects were explained in terms of complex interactions of the dislocations with point defects which were induced by the non-stoichiometry.

K.D.Glinchuk, A.V.Prokhorovich: Crystal Research and Technology, 1995, 30[2], 201-4