The reactions which were assumed to occur during cooling, when material was grown from the melt, were considered. These were used to explain existing data on the dependence of various concentrations (carrier, EL2, EL5) upon composition in crystals that had been grown from a Ga-rich Si-doped melt. An acceptable fit was found on the basis of the assumptions that EL2 was AsGaVGa, that EL5 was the acceptor complex, SiGaVGa, and that freezing-out of the reaction, VGa + AsGaVAs = AsGaVAsVGa, during cooling was responsible for a large VGa concentration and a concomitantly restricted EL2 concentration.

R.A.Morrow: Journal of Applied Physics, 1995, 78[6], 3843-5