Photoluminescence spectroscopy was used to investigate the behavior of Hg which had been implanted into molecular beam epitaxially grown material. A new recombination path in the near-bandedge region at 1.5129eV was identified with neutral Hg-bound exciton recombination (HgoX) whose localization energy obeyed an anti-Haynes rule. The electron-acceptor and donor-acceptor transitions were seen at 1.466 and 1.463eV, respectively. From the temperature dependence of the photoluminescence, a value of 0.0525eV was deduced for the binding energy of the Hg acceptor. Together with the resonant excitation of the HgoX line, the electronic signature of the Hg acceptor was further reflected by the observation of 2-hole transitions. Transitions to 2s as well as 3s states were resolved; with Raman shifts of 0.0372 and 0.0448eV, respectively. The corresponding binding energies were 0.0153 and 0.0077eV, respectively.

O.Ka, P.J.Fons: Applied Physics Letters, 1995, 67[10], 1465-7