Transmission electron microscopic studies were made of misfit and threading dislocation morphologies in 1-thick GaAs films which had been grown by molecular beam epitaxy onto (110) Si, off-set by 6 towards [001]. It was found that short and segmented misfit dislocations of 60- and 30-type were mainly oriented in one [110] and two <112> directions, respectively, near to the interface regions between GaAs and Si. On the other hand, most of the observed threading dislocations were of 60-type and were oriented along the <110> direction and the [110] growth direction on inclined {111} planes; together with screw-type threading dislocations which ran parallel to the [110] direction. It was suggested that the <112>- and [110]-oriented misfit dislocations changed into the [110]- and <110>-oriented threading dislocations, respectively, on either one of four {111} planes during growth.

M.Tamura, T.Yodo: Journal of Crystal Growth, 1995, 147[3-4], 274-82