Atomic force microscopic observations of the surface of GaAs which had been grown onto Si substrates revealed spirals that started from dislocations and couples of 2 planar defects (stacking faults and micro-twins). These defects were the sources of hillocks on the GaAs surface. The atomic force microscopy also revealed dislocation-terminated steps and stacking faults with shadows. Spirals and stacking fault shadows characterized the surface morphology of GaAs which had been grown onto Si substrates.

H.Mori, M.Tachikawa, T.Yamada, T.Sasaki: Journal of Crystal Growth, 1995, 154[1-2], 23-6