Layers of InxGa1-xAs were grown onto (100) GaAs substrates by means of the iso-electronic doping of liquid phase epitaxial layers under optimum growth conditions. Dislocations in the GaAs substrate and in the InxGa1-xAs epitaxial layer were revealed simultaneously by ultrasonic etching in CrO3-HF aqueous solutions. The dislocation density in the epitaxial layer was smaller, by a factor of 20, than that in the substrate. An experimentally based formula, which gave the confining probability of the network of dislocations which grew into the epitaxial layer from the substrate, was presented. It was deduced that the optimum x-value was 0.04 or 0.05.

W.Liu, N.Chen: Journal of Crystal Growth, 1995, 154[1-2], 19-22