Photoluminescence techniques were used to investigate the behavior of Si-implanted material that had been submitted to post-implantation rapid thermal annealing. When compared with non-implanted material, the implanted crystal exhibited a new broad band around 1.382eV in the low-temperature (2K) spectra. This band appeared to be made up of 2 unresolved recombination paths that were attributed to electron-acceptor (e,A0) and donor-acceptor pair recombinations of Si acceptor impurities that substituted at P sites.

O.Ka, A.Yamada, H.Yoshinaga, Y.Makita: Journal of Applied Physics, 1995, 78[8], 5171-3