Dislocation distributions were studied in 1-layer and 2-layer InSbxAs1-x-yBiy/InSb epitaxial heterostructures, where x was between 0.88 and 0.97, or between 0.82 and 0.90, and y ranged from 0.0016 to 0.0036. Here, the first and second sets of x-values corresponded to the first and second epitaxial layers, respectively. The y-values were governed by the limited solubility of Bi in the solid phase. The use of X-ray diffractometry and topography, and selective chemical etching, revealed the features of dislocation structure formation in epitaxial layers as a function of the growth temperature and subsequent heat treatment temperature. It was shown that the dislocation density in the 2-layer structures could be reduced almost 2-fold in comparison with that of monolayer heterostructures; with a simultaneous reduction in the level of the residual elastic stresses.

R.K.Akchurin, T.V.Sakharova: Kristallografiya, 1995, 40[4], 729-35 (Crystallography Reports, 1995, 40[4], 674-80)