Electron trapping levels in monocrystals that were doped with I were investigated by means of deep-level transient spectroscopic measurements. Two traps, located at about 0.60 and 0.21eV, were detected below the conduction band. The corresponding thermal capture cross-sections were evaluated. The first trap was present in both undoped and doped crystals, whereas the second trap appeared in doped samples.

G.Micocci, A.Tepore, R.Rella, P.Siciliano: Journal of Applied Physics, 1995, 78[9], 5427-30