It was recalled that, although the processes which occurred in polysilicon layers were very important with regard to CMOS-compatible bipolar technology, there was still an especial need for the improved modelling of diffusion. Here, a simulation model for dopant co-diffusion in polycrystalline Si was developed which took account of the grain itself as well as of the grain boundary, and of exchanges between those 2 regions.

C.Gontrand, Y.Haddab, L.Kaabi, A.Merabet: Semiconductor Science and Technology, 1995, 10[10], 1393-403