A study of Au diffusion was used to clarify the effect of P diffusion upon the defect structure of 2-step annealed wafers of Czochralski material which contained O-related precipitates. By means of deep level transient spectroscopy, and the use of published relationships, it was established that the substitutional Au concentration was independent of O precipitation. On the other hand, P diffusion (via the injection of self-interstitials into the bulk) shrank the O precipitates and increased the substitutional Au concentration to near to the solubility limit.

E.Yakimov, I.Périchaud: Applied Physics Letters, 1995, 67[14], 2054-6