A model which was based upon point defects was developed for treating the effect of stress upon dopant diffusion. Variations in the binding energies and diffusivities of dopant-defect pairs under hydrostatic pressure were modelled, and a pressure-dependent dopant diffusion equation was derived. New experiments were performed on B pile-ups near to dislocation loops, and the results were compared with the model predictions. Qualitative agreement was found, and it was concluded that stresses could play a significant role in certain device structures.

H.Park, K.S.Jones, J.A.Slinkman, M.E.Law: Journal of Applied Physics, 1995, 78[6], 3664-70