A model was proposed for the point defect assisted transient diffusion and activation of high-dose B implants. In order to model transient diffusion, a non-linear equilibrium clustering model for point defects was used. The activation of B was modelled as a Fermi level-dependent transformation of inactive dopant clusters into substitutional atoms. A comparison with experimental data showed that this approach could provide a description of both rapid thermal annealing and of long-term furnace annealing; with excellent predictability for both chemical and electrically active profiles.

A.Höfler, T.Feudel, N.Strecker, W.Fichtner, K.H.Stegemann, H.Syhre, G.Dallmann: Journal of Applied Physics, 1995, 78[6], 3671-9