Transient ion drift in depletion regions of a Schottky barrier was used to investigate Cu diffusion in B- or Al-doped material. It was shown that, within the studied temperature range, Cu-B pairing was negligible. In the case of the other acceptors, it was well described by a Coulombic interaction. In order to test the validity of the model that was used to extract the diffusion coefficients, the method was applied to the known case of Li diffusion in Si. Excellent agreement with published diffusivity data was found for both Li (figure 3) and Cu (figure 4) ions.

A.Zamouche, T.Heiser, A.Mesli: Applied Physics Letters, 1995, 66[5], 630-3