The depth distributions of PsV and CiPs complexes which formed in the space-charge regions of Au/n-Si Schottky diodes which had been irradiated with fast electrons were investigated. During irradiation, the diodes were periodically driven into a reverse-bias state by using square voltage pulses of fixed amplitude which alternated with forward-current pulses at a frequency of 2MHz. Non-flat PsV concentration profiles were revealed by deep-level transient spectroscopy, while the interstitial defects were found to have a constant density. The results were suggested to provide strong evidence for the long-range (0.1 to 1) field-assisted drift of negatively charged vacancies across the depleted region. The diffusion length of V-, as deduced from the drift model, was equal to 0.038 for float-zone material with a P content of 5 x 1015/cm3. This value was consistent with that expected on the basis of the theory of diffusion-limited reactions.

V.A.Stuchinsky, V.V.Bolotov: Journal of Physics - Condensed Matter, 1995, 7[39], 7643-