The role which was played by C co-implantation in the formation of secondary defects in self-ion irradiated (100)Si was investigated. The implantation of Si ions (540keV, 1015/cm2, 1.3 x 1011/cm2s, 90C), followed by annealing (900C, 0.25h), led to the growth of an extended defect band at the end-of-range. Range-matched C co-implantation (300keV, 1015/cm2 plus 500keV, 1015/cm2, 1.5 x 1011/cm2s, 90C) could markedly modify this defect development. Whereas the direct co-implantation of C and Si ions to similar concentrations had no apparent effect upon the formation of extended defects, such formation was suppressed when the implanted C was incorporated substitutionally into the Si lattice. The results were explained in terms of C suppression of the transient enhanced B diffusion.

T.W.Simpson, R.D.Goldberg, I.V.Mitchell: Applied Physics Letters, 1995, 67[19], 2857-9