It was recalled that, in a reverse-biased junction, trap activity was due only to carrier emission; as stimulated by the local electric field of the trap location and the applied reverse voltage via Poole-Frenkel and Fowler-Nordheim mechanisms. It was shown here that the exponent and the activation energy of the reverse voltage furnished a relationship between the trap energy level and its location. The concept was applied to a single dislocation and a single interstitial cluster.

B.Leroy: Journal de Physique III, 1995, 5[9], 1307-26