It was noted that Fe introduced a donor level at about Ec-0.4eV into n-type material. The electrical properties of this donor state were here studied by means of deep-level transient spectroscopy. It was found, by resolving the resultant overlapping deep-level transient spectroscopic peaks that were obtained after room-temperature annealing, that the donor decomposed into several other states. Isothermal annealing of samples which contained various amounts of P showed that P had no significant effect upon the annealing decay constant of the donor; thus indicating that P atoms did not take part in the annealing decay of the donor. A Poole-Frenkel field emission effect was observed in the donor level, as expected for donors in n-type Si.

S.Tanaka, H.Kitagawa: Japanese Journal of Applied Physics, 1995, 34[II-6B], L721-3