The general equations of the steady-state lifetime in semiconductors with multiple deep impurity levels were derived on the basis of recombination theory. By using these equations, the 6 capture cross-sections of three Pt-induced levels were experimentally determined. The behaviors of minority carrier lifetimes and so-called leakage currents in Pt-diffused devices were also considered. It was found that the minority carrier lifetime was affected by the three Pt-related levels, and that the major contribution to the leakage current arose from a level at Ec-0.52eV.

B.Deng, H.Kuwano: Japanese Journal of Applied Physics, 1995, 34[I-9A], 4587-92