It was recalled that point defect properties (such as interstitial diffusivity) which controlled the spatial extent of their interaction had been calculated many times. However, large discrepancies existed between reported values of these parameters and it was clearly essential to establish a consistent set of parameters for use in process simulations. In order to achieve this, a model was presented here which included important interactions which had been ignored in previous analyses. These included the bulk recombination of interstitials with vacancies, and the segregation of interstitials to surface oxide films. The effectiveness of the model in predicting the spatial extent of point defect interactions was assessed by comparing the simulation results with a wide range of experimental data. Although the same data set had previously given rise to large differences in the calculated parameter values, a single set of model parameters was obtained here and could account for the full range of data in a consistent manner.

A.M.Agarwal, S.T.Dunham: Journal of Applied Physics, 1995, 78[9], 5313-9