The relationship between Cu-induced deep centers (Ev+0.1eV), and the appearance of luminescent Cu centers (leading to a characteristic line spectrum with the most intense Cu00 no-phonon line at 1.014eV), was studied by using deep-level transient spectroscopic and photoluminescence techniques. Concentrations of 0.1eV Cu centers, which ranged from 1011 to about 1014/cm3, were obtained by means of the Cu contamination of float-zone p-type samples, without quenching. The dependence of the Cu00 line intensity upon the excitation power in the transition region to intensity saturation was used to determine the saturation intensity; which reflected the concentration of luminescent Cu centers. The saturation intensities, and the concentrations of luminescent Cu centers, exhibited a linear dependence upon the concentration of 0.1eV deep centers. It was suggested that the same Cu-induced centers were detected by deep-level transient spectroscopic and by photoluminescence techniques.

H.B.Erzgräber, K.Schmalz: Journal of Applied Physics, 1995, 78[6], 4066-8