A study was made of H-Au complexes in Au-doped material after H injection during wet chemical etching. By using deep-level transient spectroscopy, it was found that there were 3 deep levels that probably belonged to the same Au-H center. This electrically active Au-H center transformed irreversibly into an electrically inactive Au-H complex during annealing at temperatures above 150C. This transformation seemed to occur only when excess atomic H was present in the vicinity of the Au-H complexes. On the basis of the annealing kinetics, the active complex was tentatively attributed to a Au-H pair while the passive one was attributed to Au-H2.

E.O.Sveinbjörnsson, O.Engström: Physical Review B, 1995, 52[7], 4884-95