Photo-thermal reflectance measurements were made of P-implanted and annealed wafers. The great sensitivity of the photo-thermal reflectance technique to short-range and long-range disorder, as well as to residual defects, made this technique a very promising one for the thermal and opto-electronic characterization of implanted and annealed wafers. Also, photo-thermal reflectance methods had proved to be very sensitive with regard to the study of defect annihilation.

A.Seas, C.Christofides: Applied Physics Letters, 1995, 66[24], 3346-8