A study was made of double and multiple heterostructures which had been grown by means of organometallic chemical vapor deposition at 580C; using dimethylzinc, trimethylgallium, germane and phosphine as source gases. Under suitable growth conditions, mirror-smooth epitaxial ZnGeP2/GaP multiple heterostructures were obtained on (001) GaP substrates. Cross-sectional scanning electron microscopy, transmission electron microscopy and secondary ion mass spectrometry showed that the interfaces of the heterostructures were sharp and smooth. Etching studies of the top GaP (001) surface of GaP/ZnGeP2/GaP double heterostructures revealed a dislocation density of about 5 x 104/cm2. Selected area <110> electron diffraction patterns showed that the GaP layers crystallized in the zincblende structure, and that the ZnGeP2 layers crystallized in the chalcopyrite structure. It was noted that this was the first time that multiple heterostructures which combined these 2 crystal structures had been made.

G.C.Xing, K.J.Bachmann: Journal of Crystal Growth, 1995, 147[1-2], 35-8