Soda-lime silicate glass substrates were implanted with 55keV Cu, Ga and Ag ions, at temperatures of 273, 373, 498, 623 or 873K. The ion distributions varied greatly with temperature. Ion exchange between Ag and Na ions was observed at temperatures of 498K or above. A similar process occurred in Cu only at 873K. The migration of Na and Ca ions was also observed. The Na was sputtered from the surface but, at 623K or above, it was replaced from within the bulk. On the other hand, Ca at the surface migrated deeper into the glass at the same temperatures. The movement of Ca was induced by an electric field, at the surface, which was caused by the implantation process. The depletion of Na and Ca from the surface left a SiO2-rich layer. Overall, the data showed that ion implantation into a heated multi-element silicate glass produced more complex changes than were predicted by the usual ion-range theories.

N.D.Skelland, P.D.Townsend: Journal of Non-Crystalline Solids, 1995, 188[3], 243-53