The lattice sites of implanted As ions, and the annealing of implantation damage, were investigated by means of emission channelling measurements. A dose of 1013/cm2 of 73Se 60keV ions was implanted into type-IIa samples at 300K. The 73Se, with a half-life of 7.1h, decayed into 73As, with a half-life of 1920h. This, in turn, decayed into excited states in 73Ge. Channelling effects were detected in conversion electrons that were emitted during the 73Ge decay. Annealing at temperatures ranging from 873 to 1673K revealed an annealing stage of implantation damage that began at 1100K. A comparison of the measured effects with simulations that were based upon the dynamic theory of electron diffraction showed that, after annealing at temperatures above 1100K, some 55% of the implanted ions were located in substitutional lattice sites.

K.Bharuth-Ram, H.Quintel, M.Restle, C.Ronning, H.Hofsäss, S.G.Jahn: Journal of Applied Physics, 1995, 78[8], 5180-2