The defect structures of homo-epitaxial films which had been grown by hot-filament assisted chemical vapor deposition were studied by using spectroscopic techniques. Natural diamond plates with various orientations were used as substrates. Growth experiments were carried out using various CH4-H2 gas phase compositions and temperatures. Cathodoluminescence topography and infra-red absorption spectroscopy revealed that the amount of grown-in B and H was greatest for the fastest-growing {110} layers and lowest for the slowest-growing {100} layers. In the case of several {111} and {100} faces, a clear relationship was observed between the mutual separation of growth steps and the formation of point defects.

G.Janssen, W.J.P.Van Enckevort, W.Vollenberg, L.J.Giling: Journal of Crystal Growth, 1995, 148[4], 355-64