It was recalled that, when light was used to irradiate a semiconductor, incident photons with suitable wavelengths could excite electrons and holes into traps such as point defects and dislocations. This modification of the population of charged defects could modify the flow stress which was required to propagate dislocations. This led to an inhibition of dislocation motion in II-VI compound semiconductors whereas, in III-V semiconductors, light could enhance dislocation mobility. The basic characteristics of this photo-plasticity effect were reported for the present material, and it was shown how it could be exploited to reduce dislocation densities.

T.J.Garosshen, J.M.Galligan: Journal of Applied Physics, 1995, 78[8], 5098-102